| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
| 213 | DF | FIELD EFFECT DEVICE {6} |
| 288 | DF | .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17} |
| 368 | DF | .~.~ Insulated gate field effect transistor in integrated circuit {10} |
| 369 |  | .~.~.~ Complementary insulated gate field effect transistors {5} |
| 370 | DF | .~.~.~.~> Combined with bipolar transistor |
| 371 | DF | .~.~.~.~> Complementary transistors in wells of opposite conductivity types more heavily doped than the substrate region in which they are formed, e.g., twin wells |
| 372 | DF | .~.~.~.~> With means to prevent latchup or parasitic conduction channels |
| 373 | DF | .~.~.~.~> With pn junction to collect injected minority carriers to prevent parasitic bipolar transistor action {3} |
| 377 | DF | .~.~.~.~> With polysilicon interconnections to source or drain regions (e.g., polysilicon laminated with silicide) |