US PATENT SUBCLASS 257 / 377
.~.~.~.~ With polysilicon interconnections to source or drain regions (e.g., polysilicon laminated with silicide)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
369  DF  .~.~.~ Complementary insulated gate field effect transistors {5}
377.~.~.~.~ With polysilicon interconnections to source or drain regions (e.g., polysilicon laminated with silicide)

DEFINITION

Classification: 257/377

With polysilicon interconnections to source or drain regions (e.g., polysilicon laminated with silicide):

(under subclass 369) Subject matter wherein the device contains electrical interconnections to the source and/or drain regions of the IGFETs which are made of polycrystalline silicon (e.g., polysilicon laminated with a silicide).