US PATENT SUBCLASS 257 / 373
.~.~.~.~ With pn junction to collect injected minority carriers to prevent parasitic bipolar transistor action

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
369  DF  .~.~.~ Complementary insulated gate field effect transistors {5}
373.~.~.~.~ With pn junction to collect injected minority carriers to prevent parasitic bipolar transistor action {3}
374  DF  .~.~.~.~.~> Dielectric isolation means (e.g., dielectric layer in vertical grooves)
375  DF  .~.~.~.~.~> With means to reduce substrate spreading resistance (e.g., heavily doped substrate)
376  DF  .~.~.~.~.~> With barrier region of reduced minority carrier lifetime (e.g., heavily doped P+ region to reduce electron minority carrier lifetime, or containing deep level impurity or crystal damage), or with region of high threshold voltage (e.g., heavily doped channel stop region)

DEFINITION

Classification: 257/373

With pn junction to collect injected minority carriers to prevent parasitic bipolar transistor action:

(under subclass 372) Subject matter wherein the means for preventing latchup includes a pn junction for collecting minority carriers injected into the device to prevent operation of parasitic bipolar transistors which are otherwise capable of forming part of a parasitic regenerative switching structure.