US PATENT SUBCLASS 257 / 375
.~.~.~.~.~ With means to reduce substrate spreading resistance (e.g., heavily doped substrate)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
369  DF  .~.~.~ Complementary insulated gate field effect transistors {5}
373  DF  .~.~.~.~ With pn junction to collect injected minority carriers to prevent parasitic bipolar transistor action {3}
375.~.~.~.~.~ With means to reduce substrate spreading resistance (e.g., heavily doped substrate)

DEFINITION

Classification: 257/375

With means to reduce substrate spreading resistance (e.g., heavily doped substrate):

(under subclass 372) Subject matter wherein the means to prevent latchup includes means to reduce the electrical resistance of the substrate to reduce voltage differences between different parts of the substrate due to currents flowing therethrough.