US PATENT SUBCLASS 257 / 371-- .~.~.~.~ Complementary transistors in wells of opposite conductivity types more heavily doped than the substrate region in which they are formed, e.g., twin wells

US PATENT SUBCLASS 257 / 371
.~.~.~.~ Complementary transistors in wells of opposite conductivity types more heavily doped than the substrate region in which they are formed, e.g., twin wells

Current as of: June, 1999
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257 /	HD	ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213	DF	FIELD EFFECT DEVICE {6}
288	DF	.~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368	DF	.~.~ Insulated gate field effect transistor in integrated circuit {10}
369	DF	.~.~.~ Complementary insulated gate field effect transistors {5}
371		.~.~.~.~ Complementary transistors in wells of opposite conductivity types more heavily doped than the substrate region in which they are formed, e.g., twin wells

DEFINITION

Classification: 257/371

Complementary transistors in wells of opposite conductivity types more heavily doped than the substrate region in which they are formed, e.g., twin wells:

(under subclass 369) Subject matter wherein the complementary IGFETs are located in wells of semiconductor material with electrical conductivity opposite to that of the respective transistors and wherein the wells contain a higher concentration of dopant ions than the semiconductor substrate in which they are located (e.g., twin wells).