US PATENT SUBCLASS 257 / 372
.~.~.~.~ With means to prevent latchup or parasitic conduction channels

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
369  DF  .~.~.~ Complementary insulated gate field effect transistors {5}
372.~.~.~.~ With means to prevent latchup or parasitic conduction channels

DEFINITION

Classification: 257/372

With means to prevent latchup or parasitic conduction channels:

(under subclass 369) Subject matter including means to prevent conduction between regions of complementary IGFETs which form a (parasitic) regenerative structure which remains ON in the absence of a triggering signal.

(1) Note. For a definition of the regenerative structure of this subclass type, see subclass 107.