US PATENT SUBCLASS 257 / 382
.~.~.~ With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
382.~.~.~ With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) {3}
383  DF  .~.~.~.~> Contact of refractory or platinum group metal (e.g., molybdenum, tungsten, or titanium)
384  DF  .~.~.~.~> Including silicide
385  DF  .~.~.~.~> Multiple polysilicon layers

DEFINITION

Classification: 257/382

With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide):

(under subclass 368) Subject matter wherein the device has an electrical contact to its source region or drain region wherein the contact is made of a refractory or platinum group metal, or of other material which has a melting point above that of the iron group of metals and which is resistant to heat (e.g., of polysilicon, tungsten or silicide).

(1) Note. Refractory materials include refractory metals and platinum group metals which include metals found in groups IVA, VA, VIA, or VIIIA (other than iron (Fe), nickel (Ni) or cobalt (Co)) of the periodic table of the elements.