| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
| 213 | DF | FIELD EFFECT DEVICE {6} |
| 288 | DF | .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17} |
| 368 | DF | .~.~ Insulated gate field effect transistor in integrated circuit {10} |
| 382 | DF | .~.~.~ With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) {3} |
| 384 | | .~.~.~.~ Including silicide |