US PATENT SUBCLASS 257 / 383
.~.~.~.~ Contact of refractory or platinum group metal (e.g., molybdenum, tungsten, or titanium)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
382  DF  .~.~.~ With contact to source or drain region of refractory material (e.g., polysilicon, tungsten, or silicide) {3}
383.~.~.~.~ Contact of refractory or platinum group metal (e.g., molybdenum, tungsten, or titanium)

DEFINITION

Classification: 257/383

Contact of refractory or platinum group metal (e.g., molybdenum, tungsten, or titanium):

(under subclass 382) Subject matter wherein the contact to the source or drain region is made of a refractory or platinum group metal (e.g., molybdenum, tungsten, or titanium).