US PATENT SUBCLASS 257 / 394
.~.~.~ With means to prevent parasitic conduction channels

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
394.~.~.~ With means to prevent parasitic conduction channels {2}
395  DF  .~.~.~.~> Thick insulator portion {2}
400  DF  .~.~.~.~> With heavily doped channel stop portion

DEFINITION

Classification: 257/394

With means to prevent parasitic conduction channels:

(under subclass 368) Subject matter wherein the device includes means to prevent the formation of unwanted parasitic field effect transistor elements.