US PATENT SUBCLASS 257 / 400
.~.~.~.~ With heavily doped channel stop portion

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
394  DF  .~.~.~ With means to prevent parasitic conduction channels {2}
400.~.~.~.~ With heavily doped channel stop portion

DEFINITION

Classification: 257/400

With heavily doped channel stop portion:

(under subclass 394) Subject matter wherein the means to prevent parasitic conduction channels from forming comprises a region of heavy doping concentration.