US PATENT SUBCLASS 257 / 390
.~.~.~ Matrix or array of field effect transistors (e.g., array of FETs only some of which are completed, or structure for mask programmed read-only memory (ROM))

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
390.~.~.~ Matrix or array of field effect transistors (e.g., array of FETs only some of which are completed, or structure for mask programmed read-only memory (ROM)) {1}
391  DF  .~.~.~.~> Selected groups of complete field effect devices having different threshold voltages (e.g., different channel dopant concentrations)

DEFINITION

Classification: 257/390

Matrix or array of field effect transistors (e.g., array of FETs only some of which are completed, or structure for mask programmed read-only memory (ROM)):

(under subclass 368) Subject matter wherein the integrated circuit contains a two dimensional array of IGFETs, only some of which are completed devices, or the integrated circuit contains structure for a mask programmed read-only memory device.