US PATENT SUBCLASS 257 / 391
.~.~.~.~ Selected groups of complete field effect devices having different threshold voltages (e.g., different channel dopant concentrations)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
368  DF  .~.~ Insulated gate field effect transistor in integrated circuit {10}
390  DF  .~.~.~ Matrix or array of field effect transistors (e.g., array of FETs only some of which are completed, or structure for mask programmed read-only memory (ROM)) {1}
391.~.~.~.~ Selected groups of complete field effect devices having different threshold voltages (e.g., different channel dopant concentrations)

DEFINITION

Classification: 257/391

Selected groups of complete field effect devices having different threshold voltages (e.g., different channel dopant concentrations):

(under subclass 390) Subject matter wherein selected groups of complete IGFETs have different threshold voltages above which the IGFETs will operate (e.g., different IGFETs have different current carrying channel impurity dopant concentrations).