US PATENT SUBCLASS 257 / 412
.~.~ Gate electrode of refractory material (e.g., polysilicon or silicide of a refractory or platinum group metal)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
412.~.~ Gate electrode of refractory material (e.g., polysilicon or silicide of a refractory or platinum group metal) {1}
413  DF  .~.~.~> Polysilicon laminated with silicide

DEFINITION

Classification: 257/412

Gate electrode of refractory material (e.g., polysilicon or a silicide of a refractory or platinum group metal):

(under subclass 288) Subject matter wherein the device has a gate electrode which is made of a refractory material (e.g., polysilicon or a silicide of a metal found in groups IVA, VA, VIA, or VIIIA (other than iron (Fe), nickel (Ni) or cobalt (Co)) of the periodic table of the elements.