US PATENT SUBCLASS 257 / 413
.~.~.~ Polysilicon laminated with silicide

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
412  DF  .~.~ Gate electrode of refractory material (e.g., polysilicon or silicide of a refractory or platinum group metal) {1}
413.~.~.~ Polysilicon laminated with silicide

DEFINITION

Classification: 257/413

Polysilicon laminated with silicide:

(under subclass 412) Subject matter wherein the refractory material is a laminate comprising at least one layer of polysilicon and one layer of a silicide.