US PATENT SUBCLASS 257 / 347
.~.~ Single crystal semiconductor layer on insulating substrate (SOI)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
347.~.~ Single crystal semiconductor layer on insulating substrate (SOI) {4}
348  DF  .~.~.~> Depletion mode field effect transistor
349  DF  .~.~.~> With means (e.g., a buried channel stop layer) to prevent leakage current along the interface of the semiconductor layer and the insulating substrate
350  DF  .~.~.~> Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor, etc.) {1}
352  DF  .~.~.~> Substrate is single crystal insulator (e.g., sapphire or spinel) {1}

DEFINITION

Classification: 257/347

Single crystal semiconductor layer on insulating substrate (SOI):

(under subclass 288) Subject matter wherein the field effect device has a single crystal semiconductor layer located on a substrate made of electrically insulating material.

(1) Note. See this class, subclass 49, for active solid-state devices in non-single crystalline layers which

may be on insulating substrates. See this class, subclass 506, for active devices in single crystal layers which are dielectrically isolated, but do not include field effect devices.

(2) Note. Material deposited as polycrystalline or amorphous and then recrystallized, as by a scanning laser beam, is considered to be non-single crystalline for purposes of determining classification between this subclass and subclass 49, since such recrystallization typically leaves residual grain boundaries and is thus large grained polycrystalline material, rather than true single crystal material.

SEE OR SEARCH CLASS

438, Semiconductor Device Manufacturing: Process, particularly

149+, for methods of forming a field effect transistor on an insulating substrate or layer (e.g., SOS, SOI, etc.).