US PATENT SUBCLASS 257 / 352
.~.~.~ Substrate is single crystal insulator (e.g., sapphire or spinel)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
347  DF  .~.~ Single crystal semiconductor layer on insulating substrate (SOI) {4}
352.~.~.~ Substrate is single crystal insulator (e.g., sapphire or spinel) {1}
353  DF  .~.~.~.~> Single crystal islands or semiconductor layer containing only one active device {1}

DEFINITION

Classification: 257/352

Substrate is single crystal insulator (e.g., sapphire or spinel):

(under subclass 347) Subject matter wherein the SOI substrate is a single crystal insulator (e.g., sapphire or spinel).