US PATENT SUBCLASS 257 / 353
.~.~.~.~ Single crystal islands or semiconductor layer containing only one active device

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
347  DF  .~.~ Single crystal semiconductor layer on insulating substrate (SOI) {4}
352  DF  .~.~.~ Substrate is single crystal insulator (e.g., sapphire or spinel) {1}
353.~.~.~.~ Single crystal islands or semiconductor layer containing only one active device {1}
354  DF  .~.~.~.~.~> Including means to eliminate island edge effects (e.g., insulating filling between islands, or channel stop regions in island edges)

DEFINITION

Classification: 257/353

Single crystal islands of semiconductor layer containing only one active device:

(under subclass 352) Subject matter wherein the single crystal insulator SOI substrate contains single crystal islands of semiconductor material, each island containing only one active solid-state device.