US PATENT SUBCLASS 257 / 354
.~.~.~.~.~ Including means to eliminate island edge effects (e.g., insulating filling between islands, or channel stop regions in island edges)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
347  DF  .~.~ Single crystal semiconductor layer on insulating substrate (SOI) {4}
352  DF  .~.~.~ Substrate is single crystal insulator (e.g., sapphire or spinel) {1}
353  DF  .~.~.~.~ Single crystal islands or semiconductor layer containing only one active device {1}
354.~.~.~.~.~ Including means to eliminate island edge effects (e.g., insulating filling between islands, or channel stop regions in island edges)

DEFINITION

Classification: 257/354

Including means to eliminate island edge effects (e.g., insulating filling between islands, or ions in island edges):

(under subclass 353) Subject matter wherein means are provided to eliminate deleterious effects caused by the edges of each island, such means including, for example, electrically insulating filling between islands, or channel stop regions located in the edges of islands.