US PATENT SUBCLASS 257 / 350
.~.~.~ Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor, etc.)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
347  DF  .~.~ Single crystal semiconductor layer on insulating substrate (SOI) {4}
350.~.~.~ Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor, etc.) {1}
351  DF  .~.~.~.~> Complementary field effect transistor structures only (i.e., not including bipolar transistors, resistors, or other components)

DEFINITION

Classification: 257/350

Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor,

etc.):

(under subclass 347) Subject matter wherein the SOI device is combined with a different solid-state active or passive device, e.g., to form complementary MOSFETs or a FET combined with a resistor, etc.