US PATENT SUBCLASS 257 / 351
.~.~.~.~ Complementary field effect transistor structures only (i.e., not including bipolar transistors, resistors, or other components)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
347  DF  .~.~ Single crystal semiconductor layer on insulating substrate (SOI) {4}
350  DF  .~.~.~ Insulated electrode device is combined with diverse type device (e.g., complementary MOSFETs, FET with resistor, etc.) {1}
351.~.~.~.~ Complementary field effect transistor structures only (i.e., not including bipolar transistors, resistors, or other components)

DEFINITION

Classification: 257/351

Complementary field effect transistor structures only (i.e., not including bipolar transistors, resistors, or other components):

(under subclass 350) Subject matter wherein the field effect transistor and the diverse type device are field effect transistors which are complementary in conductivity type to each other (e.g., provide a CMOS structure).