US PATENT SUBCLASS 257 / 349-- .~.~.~ With means (e.g., a buried channel stop layer) to prevent leakage current along the interface of the semiconductor layer and the insulating substrate

US PATENT SUBCLASS 257 / 349
.~.~.~ With means (e.g., a buried channel stop layer) to prevent leakage current along the interface of the semiconductor layer and the insulating substrate

Current as of: June, 1999
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257 /	HD	ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213	DF	FIELD EFFECT DEVICE {6}
288	DF	.~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
347	DF	.~.~ Single crystal semiconductor layer on insulating substrate (SOI) {4}
349		.~.~.~ With means (e.g., a buried channel stop layer) to prevent leakage current along the interface of the semiconductor layer and the insulating substrate

DEFINITION

Classification: 257/349

With means (e.g., a buried channel stop layer) to prevent leakage current along the interface of the semiconductor layer and the insulating substrate:

(under subclass 347) Subject matter wherein the SOI device includes means to prevent undesirable stray current to flow along the interface between the semiconductor layer and the insulating substrate.

(1) Note. The means to prevent this stray current may be, for example, a thin layer of doped semiconductor material for trapping charge /which would otherwise flow through a channel in the device.