US PATENT SUBCLASS 257 / 409
.~.~ With means to increase breakdown voltage (e.g., field shield electrode, guard ring, etc.)


Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
288  DF  .~ Having insulated electrode (e.g., MOSFET, MOS diode) {17}
409.~.~ With means to increase breakdown voltage (e.g., field shield electrode, guard ring, etc.)


DEFINITION

Classification: 257/409

With means to increase breakdown voltage (e.g., field shield electrode, guard ring, etc.):

(under subclass 288) Subject matter wherein the device has means to increase the voltage that can be applied to the device without causing electrical breakdown of the device.