| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
| 213 | DF | FIELD EFFECT DEVICE {6} |
| 256 |  | .~ Junction field effect transistor (unipolar transistor) {15} |
| 257 | DF | .~.~> Light responsive or combined with light responsive device {1} |
| 259 | DF | .~.~> Elongated active region acts as transmission line or distributed active element (e.g., "transmission line" field effect transistor) |
| 260 | DF | .~.~> Same channel controlled by both junction and insulated gate electrodes, or by both Schottky barrier and pn junction gates (e.g., "taper isolated" memory cell) |
| 261 | DF | .~.~> Junction gate region free of direct electrical connection (e.g., floating junction gate memory cell structure) |
| 262 | DF | .~.~> Combined with insulated gate field effect transistor (IGFET) |
| 263 | DF | .~.~> Vertical controlled current path {3} |
| 268 | DF | .~.~> Enhancement mode {1} |
| 270 | DF | .~.~> Plural, separately connected, gates control same channel region |
| 271 | DF | .~.~> Load element or constant current source (e.g., with source to gate connection) |
| 272 | DF | .~.~> Junction field effect transistor in integrated circuit {4} |
| 279 | DF | .~.~> Pn junction gate in compound semiconductor material (e.g., GaAs) |
| 280 | DF | .~.~> With Schottky gate {3} |
| 285 | DF | .~.~> With profiled channel dopant concentration or profiled gate region dopant concentration (e.g., maximum dopant concentration below surface) |
| 286 | DF | .~.~> With non-uniform channel thickness or width |
| 287 | DF | .~.~> With multiple channels or chanel segments connected in parallel, or with channel much wider than length between source and drain (e.g., power JFET) |