US PATENT SUBCLASS 257 / 285
.~.~ With profiled channel dopant concentration or profiled gate region dopant concentration (e.g., maximum dopant concentration below surface)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
285.~.~ With profiled channel dopant concentration or profiled gate region dopant concentration (e.g., maximum dopant concentration below surface)

DEFINITION

Classification: 257/285

With profiled channel dopant concentration or profiled gate region dopant concentration (e.g., maximum dopant concentration below surface):

(under subclass 256) Subject matter wherein the JFET has a variable impurity atom dopant concentration in the channel or gate region, e.g., wherein the maximum dopant concentration is located below the surface of the device, in either the channel or gate region.