US PATENT SUBCLASS 257 / 259
.~.~ Elongated active region acts as transmission line or distributed active element (e.g., "transmission line" field effect transistor)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
259.~.~ Elongated active region acts as transmission line or distributed active element (e.g., "transmission line" field effect transistor)

DEFINITION

Classification: 257/259

Elongated active region acts as transmission line or distributed active element (e.g., "transmission line" field effect transistor):

(under subclass 256) Subject matter including at least one elongated active region (source, gate, or drain) which transmits or distributes charge carriers.

(1) Note. When the impedance of an element at the operating frequency is due primarily to the parameters of the element itself, and in considering the inductance, capacitance, and resistance of the element they must be considered as mixed together and spread out along the element rather than being considered as separate discrete lumps or components as in the case of simple series and parallel circuits, the element may be said to have distributed parameters.

SEE OR SEARCH CLASS

333, Wave Transmission Lines and Networks, appropriate subclasses for transmission lines or distributed elements, per se.

438, Semiconductor Device Manufacturing: Process, particularly

167+, for methods of forming a Schottky gate field effect device and subclasses 186+ for methods of forming a junction gate field effect device.