US PATENT SUBCLASS 257 / 262
.~.~ Combined with insulated gate field effect transistor (IGFET)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
262.~.~ Combined with insulated gate field effect transistor (IGFET)

DEFINITION

Classification: 257/262

Combined with insulated gate field effect transistor (IGFET):

(under subclass 256) Subject matter including a field effect transistor having a gate (control) electrode which is electrically insulated from the channel and other electrodes of the transistor.

(1) Note. The combined JFET and IGFET may be electrically connected so that the source or drain electrode of one FET is connected to the gate electrode of the other FET.