US PATENT SUBCLASS 257 / 286
.~.~ With non-uniform channel thickness or width

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
286.~.~ With non-uniform channel thickness or width

DEFINITION

Classification: 257/286

With non-uniform channel thickness or width:

(under subclass 256) Subject matter wherein the channel has a non-uniform width or thickness (which lies in a plane perpendicular to both the channel length and width).

(1) Note. Channel length is measured along a line connecting the source and drain, while channel width is measured perpendicular to the length. Both length and width lie in a plane, parallel to the device surface. See the illustration, below. [figure]