US PATENT SUBCLASS 257 / 261
.~.~ Junction gate region free of direct electrical connection (e.g., floating junction gate memory cell structure)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
261.~.~ Junction gate region free of direct electrical connection (e.g., floating junction gate memory cell structure)

DEFINITION

Classification: 257/261

Junction gate region free of direct electrical connection (e.g., floating junction gate memory cell structure):

(under subclass 256) Subject matter including at least one gate electrode region which is isolated from the channel by a rectifying junction and is not directly provided with an electrical connection or terminal.

(1) Note. This type of gate is a floating junction gate, as contrasted with a floating insulated gate.

(2) Note. See this class, subclass 315, for floating insulated gate field effect devices.

(3) Note. The floating gate region may capacitively store electrical charge and be used as a memory element.