US PATENT SUBCLASS 257 / 287
.~.~ With multiple channels or chanel segments connected in parallel, or with channel much wider than length between source and drain (e.g., power JFET)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
287.~.~ With multiple channels or chanel segments connected in parallel, or with channel much wider than length between source and drain (e.g., power JFET)

DEFINITION

Classification: 257/287

With multiple channels or channel segments connected in parallel, or with channel much wider than length between source and drain (e.g., power JFET):

(under subclass 256) Subject matter including more than one channel or channel segments/portions which are electrically connected in parallel, or wherein the device has a channel whose width is much wider than the channel length, the channel length being the distance between the source and

drain of the JFET.

SEE OR SEARCH THIS CLASS, SUBCLASS:

134+, for JFET devices, in general.

504, for JFET type isolation.