US PATENT SUBCLASS 257 / 272
.~.~ Junction field effect transistor in integrated circuit

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
272.~.~ Junction field effect transistor in integrated circuit {4}
273  DF  .~.~.~> With bipolar device
274  DF  .~.~.~> Complementary junction field effect transistors
275  DF  .~.~.~> Microwave integrated circuit (e.g., microstrip type) {2}
278  DF  .~.~.~> With devices vertically spaced in different layers of semiconductor material (e.g., "3-dimensional" integrated circuit)

DEFINITION

Classification: 257/272

Junction field effect transistor in integrated circuit:

(under subclass 256) Subject matter located in a single monolithic semiconductor chip with other active and/or passive devices.