US PATENT SUBCLASS 257 / 275
.~.~.~ Microwave integrated circuit (e.g., microstrip type)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
272  DF  .~.~ Junction field effect transistor in integrated circuit {4}
275.~.~.~ Microwave integrated circuit (e.g., microstrip type) {2}
276  DF  .~.~.~.~> With contact or heat sink extending through hole in semiconductor substrate, or with electrode suspended over substrate (e.g., air bridge)
277  DF  .~.~.~.~> With capacitive or inductive elements

DEFINITION

Classification: 257/275

Microwave integrated circuit (e.g., microstrip type):

(under subclass 272) Subject matter structured to operate at microwave frequencies in an integrated circuit containing microwave components (e.g., microstrip transmission lines).