US PATENT SUBCLASS 257 / 276
.~.~.~.~ With contact or heat sink extending through hole in semiconductor substrate, or with electrode suspended over substrate (e.g., air bridge)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
272  DF  .~.~ Junction field effect transistor in integrated circuit {4}
275  DF  .~.~.~ Microwave integrated circuit (e.g., microstrip type) {2}
276.~.~.~.~ With contact or heat sink extending through hole in semiconductor substrate, or with electrode suspended over substrate (e.g., air bridge)

DEFINITION

Classification: 257/276

With contact or heat sink extending through hole in semiconductor substrate, or with electrode suspended over substrate (e.g., air bridge):

(under subclass 275) Subject matter containing a hole in the semiconductor substrate and an electrical contact or a heat dissipation means extending through the hole.

SEE OR SEARCH THIS CLASS, SUBCLASS:

522, for integrated circuit devices employing air isolation.