US PATENT SUBCLASS 257 / 278
.~.~.~ With devices vertically spaced in different layers of semiconductor material (e.g., "3-dimensional" integrated circuit)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
272  DF  .~.~ Junction field effect transistor in integrated circuit {4}
278.~.~.~ With devices vertically spaced in different layers of semiconductor material (e.g., "3-dimensional" integrated circuit)

DEFINITION

Classification: 257/278

With devices vertically spaced in different layers of semiconductor material (e.g., "3-dimensional" integrated circuit):

Subject matter under 272 wherein the JFET and other active and/or passive devices in that chip are located in mutually perpendicular planes in different layers of semiconductor

device material.