US PATENT SUBCLASS 257 / 260-- .~.~ Same channel controlled by both junction and insulated gate electrodes, or by both Schottky barrier and pn junction gates (e.g., "taper isolated" memory cell)

US PATENT SUBCLASS 257 / 260
.~.~ Same channel controlled by both junction and insulated gate electrodes, or by both Schottky barrier and pn junction gates (e.g., "taper isolated" memory cell)

Current as of: June, 1999
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257 /	HD	ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213	DF	FIELD EFFECT DEVICE {6}
256	DF	.~ Junction field effect transistor (unipolar transistor) {15}
260		.~.~ Same channel controlled by both junction and insulated gate electrodes, or by both Schottky barrier and pn junction gates (e.g., "taper isolated" memory cell)

DEFINITION

Classification: 257/260

Same channel controlled by both junction and insulated gate electrodes, or by both Schottky barrier and pn junction gates (e.g., "taper isolated" memory cell):

(under subclass 256) Subject matter including plural gate electrodes or regions, at least one of which is isolated from the channel by a rectifying junction and at least another of which is isolated from the channel by an insulating layer therebetween, or wherein one rectifying junction may be a metal-to-semiconductor (Schottky) type and the other a pn

junction.

(1) Note. In such devices, the junction gate region may be free of direct electrical connection (e.g., "taper isolated" memory cell), i.e., wherein the JFET has at least one gate electrode region which is isolated from the channel by a rectifying junction and is not directly provided with an electrical connection or terminal.