US PATENT SUBCLASS 257 / 279
.~.~ Pn junction gate in compound semiconductor material (e.g., GaAs)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
279.~.~ Pn junction gate in compound semiconductor material (e.g., GaAs)

DEFINITION

Classification: 257/279

Pn junction gate in compound semiconductor material (e.g., GaAs):

(under subclass 256) Subject matter including a pn junction gate formed in a semiconductor material that is a compound, e.g., GaAs, as contrasted to an elemental semiconductor such as silicon or germanium.