US PATENT SUBCLASS 257 / 263
.~.~ Vertical controlled current path

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
263.~.~ Vertical controlled current path {3}
264  DF  .~.~.~> Enhancement mode or with high resistivity channel (e.g., doping of 1015cm-3 or less)
265  DF  .~.~.~> In integrated circuit
266  DF  .~.~.~> With multiple parallel current paths (e.g., grid gate) {1}

DEFINITION

Classification: 257/263

Vertical controlled current path:

(under subclass 256) Subject matter wherein the operating current of the JFET has a path perpendicular to a main surface of the JFET and is controlled by the gate electrode of the device.