US PATENT SUBCLASS 257 / 264
.~.~.~ Enhancement mode or with high resistivity channel (e.g., doping of 1015cm-3 or less)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
263  DF  .~.~ Vertical controlled current path {3}
264.~.~.~ Enhancement mode or with high resistivity channel (e.g., doping of 1015cm-3 or less)

DEFINITION

Classification: 257/264

Enhancement mode or with high resistivity channel (e.g., doping of 10[supscrpt]15[end supscrpt]cm[supscrpt]-3[end supscrpt] or less):

(under subclass 263) Subject matter wherein an increase in the magnitude of the gate bias voltage increases the operating current, only leakage current flows when the gate voltage is zero, and conduction does not begin until the gate voltage reaches a threshold value; or the JFET has a channel made of relatively high electrical resistivity, e.g., due to doping with impurity ions of 10[supscrpt]15[end supscrpt] cm[supscrpt]-3 [end supscrpt]or less.