US PATENT SUBCLASS 257 / 268
.~.~ Enhancement mode

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
268.~.~ Enhancement mode {1}
269  DF  .~.~.~> With means to adjust barrier height (e.g., doping profile)

DEFINITION

Classification: 257/268

Enhancement mode:

(under subclass 256) Subject matter wherein an increase in the magnitude of the gate bias voltage increases the operating current, only leakage current flows when the gate voltage is zero, and conduction does not begin until the gate voltage reaches a threshold value.