US PATENT SUBCLASS 257 / 269
.~.~.~ With means to adjust barrier height (e.g., doping profile)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
268  DF  .~.~ Enhancement mode {1}
269.~.~.~ With means to adjust barrier height (e.g., doping profile)

DEFINITION

Classification: 257/269

With means to adjust barrier height (e.g., doping profile):

(under subclass 268) Subject matter including means to adjust the electronic height of the Schottky barrier gate junction, e.g., a profiled impurity dopant concentration.