US PATENT SUBCLASS 257 / 280
.~.~ With Schottky gate

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
280.~.~ With Schottky gate {3}
281  DF  .~.~.~> Schottky gate to silicon semiconductor
282  DF  .~.~.~> Gate closely aligned to source region {1}
284  DF  .~.~.~> Schottky gate in groove

DEFINITION

Classification: 257/280

With Schottky gate:

(under subclass 256) Subject matter including a metal to semiconductor rectifying (i.e., Schottky barrier) gate electrode.

(1) Note. A Schottky barrier gate JFET is referred to commonly as a MESFET (MEtal-Semiconductor field effect transistor).