US PATENT SUBCLASS 257 / 282
.~.~.~ Gate closely aligned to source region

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
280  DF  .~.~ With Schottky gate {3}
282.~.~.~ Gate closely aligned to source region {1}
283  DF  .~.~.~.~> With groove or overhang for alignment

DEFINITION

Classification: 257/282

Gate closely aligned to source region:

(under subclass 280) Subject matter wherein the gate region is closely aligned with the source region.

SEE OR SEARCH THIS CLASS, SUBCLASS:

332, 346, 387, and 797, for other self-aligned gate devices.