US PATENT SUBCLASS 257 / 281
.~.~.~ Schottky gate to silicon semiconductor

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

213  DF  FIELD EFFECT DEVICE {6}
256  DF  .~ Junction field effect transistor (unipolar transistor) {15}
280  DF  .~.~ With Schottky gate {3}
281.~.~.~ Schottky gate to silicon semiconductor

DEFINITION

Classification: 257/281

Schottky gate to silicon semiconductor:

(under subclass 280) Subject matter wherein the semiconductor material contacting the gate electrode material is made of silicon.