(under subclass 213) Subject matter wherein the field effect device is a device in which storage sites for packets of electric charge are induced at or below the surface of the active solid-state (semiconductor) device by an electric field applied to the device and wherein carrier potential energy per unit charge minima are established at a given storage site and such charge packets are injected into the device substrate or into a data bus.
(1) Note. This type device differs from a charge transfer device in that, in the latter, charge is transferred to adjacent charge storage sites in a serial manner whereas in the former, the charge is injected in a non-serial manner to the device substrate or a data bus.