(under the class definition) Subject matter wherein the active solid-state device has a high resistivity semiconductor region of one conductivity type having a region of opposite conductivity type forming a pn junction with a central portion of the high resistivity layer, with structural means provided to forward bias the pn junction to inject minority carriers into the high resistivity region to increase its conductivity through conductivity modulation.
SEE OR SEARCH CLASS
327, Miscellaneous Active Electrical Nonlinear Devices, Circuits, and Systems,
397, and 402 for a delay controlled switch using a unijunction transistor and having a variable or fixed delay respectively; subclasses 438+ for gating circuits utilizing a unijunction transistor, and subclass 569 for a miscellaneous circuit which utilizes a unijunction transistor.
361, Electricity: Electrical Systems and Devices,
91.3, for overvoltage protection with time delay, and subclass 198 for time delay with unijunction devices.
388, Electricity: Motor Control Systems, 919, for unijunction transistor circuit trigger control means.
