US PATENT SUBCLASS 257 / 734
COMBINED WITH ELECTRICAL CONTACT OR LEAD

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

734COMBINED WITH ELECTRICAL CONTACT OR LEAD {14}
735  DF  .~> Beam leads (i.e., leads that extend beyond the ends or sides of a chip component) {1}
737  DF  .~> Bump leads {1}
739  DF  .~> With textured surface
740  DF  .~> With means to prevent contact from penetrating shallow pn junction (e.g., prevention of aluminum "spiking")
741  DF  .~> Of specified material other than unalloyed aluminum {10}
773  DF  .~> Of specified configuration {3}
777  DF  .~> Chip mounted on chip
778  DF  .~> Flip chip
779  DF  .~> Solder wettable contact, lead or bond
780  DF  .~> Ball or nail head type contact, lead or bond {1}
782  DF  .~> Die bond {1}
784  DF  .~> Wire contact, lead or bond
785  DF  .~> By pressure alone
786  DF  .~> Configuration or pattern of bonds

DEFINITION

Classification: 257/734

COMBINED WITH ELECTRICAL CONTACT OR LEAD:

(under the class definition) Subject matter wherein the active solid-state device is provided with one or more electrical contacts or leads.

SEE OR SEARCH THIS CLASS, SUBCLASS:

41, for point contact rectifiers.

44, through 47, for devices with a metal contact alloyed to elemental semiconductor type PN junction in a non-regenerative structure.

54, for Schottky barrier to amorphous semiconductor material device.

73, for Schottky barrier to polycrystalline semiconductor material device.

81, and 82, for light emitter combined with or also constituting a light responsive device and having a specific housing or contact structure. 91, for plural light emitting devices with shaped contacts or opaque masking.

99, for light emitting devices with specified housing or contact structure.

145, for a regenerative type device combined with a FET with extended latching current level and a low impedance channel contact extending below the device surface.

155, and 156, for a regenerative type device with switching speed enhancing means (e.g., a Schottky contact).

177, through 182, for a regenerative type device with housing or external electrode.

217, for a majority signal carrier charge transfer device with a conductive means in direct contact with channel (e.g., a non-insulated gate).

260, for JFET having the same channel controlled by, for example, Schottky barrier and pn junction gates.

276, for a JFET in a microwave integrated circuit with a contact or heat sink extending through a hole in the semiconductor.

280, through 284, for JFETs with a Schottky gate electrode.

316, through 322, for a variable threshold insulated electrical field effect device with additional contacted control electrode.

343, for graded channel dopant IGFET device with plural sections connected in parallel and having all contacts on the same surface.

382, through 385, for an IGFET in an integrated circuit with a refractory material contact to source or drain region. 449, through 457, for Schottky contacts in light responsive devices.

471, through 486, for Schottky contact devices.

502, for high power integrated circuit devices with

electrical isolation and a backside collector contact.

503, for an integrated circuit device with electrically isolated components having a contact or metallization configuration to reduce parasitic coupling.

522, for beam-lead supported semiconductor islands in integrated circuits.

573, for Darlington configuration non-isolated bipolar transistors with resistance means connected between transistor base regions and with housing or contact structure or configuration.

576, for complementary bipolar transistors sharing a common active region (e.g., IIL, I[supscrpt]2[end supscrpt]L) including lateral bipolar transistor structure and having contacts of a refractory material.

584, for bipolar transistor device with enlarged emitter area and with housing or contact means.

602, for a voltage variable capacitance device with specified housing or contact.

621, for a semiconductor device with electrical contact in a hole in the semiconductor (e.g., lead extends through semiconductor body).

624, for mesa structure device having a low resistance ohmic connection along a mesa edge. 661, through 663, for superconductive contacts or leads.

664, for transmission line leads.

665, for contacts or leads including fusible link or noise suppression means.

666, through 677, for lead frames.

688, and 689, for housings with large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element.

690, through 700, for housings with specified contact or lead.

905, for plural DRAM cells sharing a common contact or common trench.

926, for a device with an elongated lead extending axially through another elongated lead.

928, for shorted pn or Schottky junction other than an emitter junction.

SEE OR SEARCH CLASS

174, Electricity: Conductors and Insulators, 99+, for bus bar structure, per se.

361, Electricity: Electrical Systems and Devices,

772, 776 for specific lead configurations connecting electronic systems and devices to printed circuit boards.