US PATENT SUBCLASS 257 / 49
NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
50  DF  .~> Non-single crystal, or recrystallized, active junction adapted to be electrically shorted (e.g., "anti-fuse" element)
51  DF  .~> Non-single crystal, or recrystallized, material forms active junction with single crystal material (e.g., monocrystal to polycrystal pn junction or heterojunction)
52  DF  .~> Amorphous semiconductor material {4}
64  DF  .~> Non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation)
65  DF  .~> Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., GexSi1-x, polycrystalline silicon with dangling bond modifier)
66  DF  .~> Field effect device in non-single crystal, or recrystallized, semiconductor material {3}
73  DF  .~> Schottky barrier to polycrystalline semiconductor material
74  DF  .~> Plural recrystallized semiconductor layers (e.g., "3-dimensional integrated circuit")
75  DF  .~> Recrystallized semiconductor material

DEFINITION

Classification: 257/49

NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION):

(under the class definition) Subject matter wherein there is an active junction (e.g., a junction between dissimilar materials, or a junction induced by an applied electric field, which exhibits non-linear current-voltage characteristics) and at least part of the active junction is formed by a semiconductor material in polycrystalline or amorphous form.

SEE OR SEARCH CLASS

136, Batteries: Thermoelectric and Photoelectric,

258, for photoelectric cells with polycrystalline or amorphous semiconductor material.

438, Semiconductor Device Manufacturing: Process, particularly

96, and 482+ for methods of depositing amorphous semiconductive material functioning as an active region for an electrical device and subclasses 97 and 488+ for methods of depositing polycrystalline semiconductive material functioning as an active region for an electrical device.