US PATENT SUBCLASS 257 / 64
.~ Non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
64.~ Non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation)

DEFINITION

Classification: 257/64

Non-single crystal, or recrystallized, material with specified crystal structure (e.g., specified crystal size or orientation):

(under subclass 49) Subject matter wherein the non-single crystal semiconductor material has a specified crystal structure, such as a specified grain size, a preferred crystallos:graphic axis, or orientation; polycrystalline material in the form of elongated crystallites; or particular configuration of grain boundaries.