US PATENT SUBCLASS 257 / 65
.~ Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., GexSi1-x, polycrystalline silicon with dangling bond modifier)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
65.~ Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., GexSi1-x, polycrystalline silicon with dangling bond modifier)

DEFINITION

Classification: 257/65

Non-single crystal, or recrystallized, material containing non-dopant additive, or alloy of semiconductor materials (e.g., GexSi1-x, polycrystalline silicon with dangling bond modifier):

(under subclass 49) Subject matter wherein the non-single crystal semiconductor is an alloy or contains an additive other than an electrically active dopant, such as a dangling bond passivator or an additive to change the band gap of the amorphous semiconductor material (e.g., Six[end subscrpt]Ge1-x, SiNy[end subscrpt]).