US PATENT SUBCLASS 257 / 52
.~ Amorphous semiconductor material

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

49  DF  NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9}
52.~ Amorphous semiconductor material {4}
53  DF  .~.~> Responsive to nonelectrical external signals (e.g., light) {3}
57  DF  .~.~> Field effect device in amorphous semiconductor material {4}
62  DF  .~.~> With impurity other than hydrogen to passivate dangling bonds (e.g., halide)
63  DF  .~.~> Amorphous semiconductor is alloy or contains material to change band gap (e.g., SixGe1-x, SiNy)

DEFINITION

Classification: 257/52

Amorphous semiconductor material:

(under subclass 49) Subject matter wherein the non-single crystal semiconductor material is amorphous, i.e., non-crystalline in the sense that (1) there is either complete disorder in the arrangement of atoms or molecules of the material or (2) there is an absence of any long range structural order that is detectable by electron or X-ray diffraction patterns of the material.

SEE OR SEARCH THIS CLASS, SUBCLASS:

2, through 5, for bulk effect switching in amorphous material.

16, for superlattice quantum well heterojunction devices of amorphous semiconductor material.

646, for amorphous semiconductor material coating to control surface effects.

SEE OR SEARCH CLASS

136, Batteries: Thermoelectric and Photoelectric,

258, for photoelectric cells with polycrystalline or amorphous semiconductor material. 148, Metal Treatment, digest 1 for treatment of amorphous semiconductor material and

152, for treatment of a single crystal on an amorphous substrate.

438, Semiconductor Device Manufacturing: Process, particularly

482+, for methods for depositing amorphous semiconductor.